技術簡介
Technology Description

晶圓表面形貌量測系統是利用光偏折原理,由相機擷取晶圓上的條紋影像,並應用相位移及相位展開技術量測條紋變形量,即可測量出晶圓表面斜率變化及表面形貌,並可分析晶圓之翹曲及薄膜應力,本技術可扣除重力影響,重現樣本最真實的翹曲值。

The wafer surface topography measurement system utilizes the principle of light deflection, where a camera captures fringe images on the wafer. By applying phase-shifting and phase-unwrapping techniques to measure fringe deformation, the system can determine surface slope variations and surface topography. It also allows for the analysis of wafer warpage and thin-film stress. This technology can eliminate the effects of gravity, providing the most accurate representation of the sample's true warpage.

技術規格
Specifications
  • 橫向解析度:220 µm@6” & 8”、300 µm@12“
    Lateral resolution:220 µm@6” & 8”、300 µm@12”
  • 軸向解析度:≤ 1 μm
    Vertical resolution: ≤ 1 μm
  • 翹曲精度:≤ 1 μm
    Bow & Warp accuracy:≤ 1 μm
  • 量測時間:≤ 10 sec/片
    Measuring time ≤ 10 sec/wafer
  • 量測範圍:6吋、8吋、12吋
    Measuring area:6、8、12 inch wafer
晶圓量測結果
晶圓量測結果
系統外觀圖
系統外觀圖
應用範圍
Applications
  1. 晶圓翹曲及薄膜應力量測
    Wafer warpage/Bow/Film stress
  2. 矽、碳化矽、氮化鎵晶圓
    Si, SiC, GaN wafer
三維高度分布圖
三維高度分布圖
三維紋理圖
三維紋理圖