技術簡介
Technology Description

VCSEL具小型化、高輸出、近紅外波段與脈衝驅動等特性,應用市場持續擴大。VCSEL光形具有明顯的空間分布特性,若量測幾何、收光方式與演算法不同,容易造成測試結果差異,影響產品研發與規格驗證。

本技術建立VCSEL快速光形量測模組、輻射強度分布演算法與輻射通量追溯標準。利用相機取得二維光形E(x,y),轉換為角度分布I(θ,φ),再計算輻射通量Φ,並以標準件驗證量測結果。支援800 nm to 1700 nm與20 mW to 10 W量測範圍,提升產業量測一致性。

VCSELs feature compact footprints, high power output, near-infrared operation, and pulse-driven capabilities, driving market expansion. VCSEL beam profiles exhibit distinct spatial distribution characteristics; variations in measurement geometry, light collection, and algorithms can lead to divergent test results, affecting product R&D and validation.

This technology establishes a rapid VCSEL beam profiling module, radiant intensity distribution algorithms, and radiant flux traceability standards. Using a camera-based system to capture 2D beam profiles E(x,y), convert them into angular distributions I(θ,φ), and compute total radiant flux Φ with standard reference verification. Supporting 800 nm to 1700 nm and 20 mW to 10 W ranges to enhance measurement consistency.

技術規格
Specifications
  • 量測對象:VCSEL元件與模組
  • 量測項目:二維光形、輻射強度分布、輻射通量
  • 波長範圍:800 nm to 1700 nm
  • 功率範圍:20 mW to 10 W
  • 量測方式:相機式二維影像量測
  • 演算法:E(x,y)轉換I(θ,φ)並計算Φ
  • 標準件穩定性:變異量<1%
  • 量測再現性:變異量<3%
光形量測模組|輻射強度分布|輻射通量追溯
光形量測模組|輻射強度分布|輻射通量追溯
應用範圍
Applications
  1. VCSEL元件研發 (Device development)
  2. 光形特性驗證 (Beam profile validation)
  3. 輻射通量校正 (Radiant flux calibration)
  4. 生產規格檢測 (Production verification)
技術特色與量測亮點 (800-1700 nm波段與<3%再現性)
技術特色與量測亮點 (800-1700 nm波段與<3%再現性)