技術簡介
Technology Description

目前先進製程對溫度精度要求提昇,能快速且有效測量晶圓全域溫度分布的TC wafer需求明確。但受限於系統整合技術、相關溫度材料開發,以及可靠度測試驗證設備和場域,使得無線TC wafer產品尚未國產化。

無線TC wafer可減少開啟chamber之時機,每次啟閉chamber使產線停止,影響產能甚巨。製程條件同步之即時溫度監控,可對比蝕刻後之關鍵尺寸量測,為製程參數控制之重要指標,並可實現半導體製程、量測與校正。本技術適用於晶圓代工廠、光學元件、光阻、材料、設備及檢測業者。

Advanced semiconductor manufacturing processes require increasingly stringent temperature precision, driving high demand for TC wafers that rapidly and accurately measure full-wafer temperature distribution.

A wireless TC wafer minimizes the need to open vacuum chambers, avoiding production line downtime and throughput loss. Real-time temperature monitoring synchronized with process conditions serves as a vital index for process parameter control and CD correlation after etching. This technology is applicable to wafer foundries, optical devices, photoresists, materials, equipment, and metrology suppliers.

技術規格
Specifications
  • 產品尺寸:12吋(300 mm)厚度 ≤ 1.2 mm
  • 量測項目:溫度量測、即時溫度穩定度變化、均勻性
  • 溫度量測區間:20 ℃ to 140 ℃
  • 準確度:±0.2 ℃
  • 資料傳輸:無線傳輸
  • 感測器數目:65件
  • 標準追溯:可溯源至國家計量標準
  • 應用情境:調校、維護、驗證及跨機台/跨廠區匹配
晶圓式溫度量測儀 (300 mm晶圓載具與TC感測器)
晶圓式溫度量測儀 (300 mm晶圓載具與TC感測器)
量測系統配置 (65件TC感測器與Wireless充電線圈)
量測系統配置 (65件TC感測器與Wireless充電線圈)
應用範圍
Applications
  1. 參數調校 (parameter tuning)
  2. 設備維護 (Equipment maintenance)
  3. 製程驗證 (Process verification)
  4. 跨機台/跨廠區匹配 (Tool & fab matching)
技術特色與量測亮點 (20-140 ℃區間與全域溫度即時監控)
技術特色與量測亮點 (20-140 ℃區間與全域溫度即時監控)